Author Affiliations
Abstract
1 Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Electronics Information Engineering,Tianjin University of Technology, Tianjin 300384, China
2 Tianjin Institute of Power Sources, Tianjin 300384, China
Cu2ZnSn(S, Se)4(CZTSSe) thin films were deposited on flexible substrates by three evaporation processes at high temperature. The chemical compositions, microstructures and crystal phases of the CZTSSe thin films were respectively characterized by inductively coupled plasma optical emission spectrometer (ICP-OES), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman scattering spectrum. The results show that the single-step evaporation method at high temperature yields CZTSSe thin films with nearly pure phase and high Sn-related phases. The elemental ratios of Cu/(Zn+Sn)=1.00 and Zn/Sn=1.03 are close to the characteristics of stoichiometric CZTSSe. There is the smooth and uniform crystalline at the surface and large grain size at the cross section for the films, and no other phases exist in the film by XRD and Raman shift measurement. The films are no more with the Sn-related phase deficiency.
光电子快报(英文版)
2016, 12(6): 446
Author Affiliations
Abstract
1 Tianjin Key Laboratory of Film Electronic and Communication Devices, Department of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, China
2 National Key Laboratory of Power Sources, Tianjin Institute of Power Sources, Tianjin 300381, China
Cadmium sulfide (CdS) buffer layers with the scale of 10 cm×10 cm are deposited by chemical bath deposition (CBD) with different temperatures and thiourea concentrations under low ammonia condition. There are obvious hexagonal phases and cubic phases in CdS thin films under the conditions of low temperature and high thiourea concentration. The main reason is that the heterogeneous reaction is dominant for homogeneous reaction. At low temperature, CdS thin films with good uniformity and high transmittance are deposited by adjusting the thiourea concentration, and there is almost no precipitation in reaction solution. In addition, the low temperature is desired in assembly line. The transmittance and the band gap of CdS thin films are above 80% and about 2.4 eV, respectively. These films are suitable for the buffer layers of large-scale Cu(In,Ga)Se2(CIGS) solar cells.
光电子快报(英文版)
2015, 11(4): 273

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